Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation

Ion Implantation-Induced Layer Splitting of Semiconductors

The formation of a continuous amorphous layer by room . . temperature implantation of boron into silicon

Ion implantation of 60 ke V boron into {100} silicon at medium beam currents (150 ttA) was performed at 300-315 K over the dose range from 1 to 8 X 1016/cm2 • Diffraction contrast and high-resolution phase contrast transmission electron microscopy (TEM) were used on planview and 90· cross-section samples to study the formation of a continuous amorphous layer as a function of increasing dose. Ou...

Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon

The Study of Ion Adsorption by Amorphous Blast Furnace Slag

In this study, the blast furnace slag was used as absorbing bed and then, its ionic adsorption was studied. For this reason, various experimental parameters such as pH, contact time and the primary ion concentration were investigated. The remaining concentrations of ions such as; Mn2+ and Fe2+ in water were measured by atomic adsorption spectroscopy. The chemical and p...

Amorphous Boron containing Silicon Carbo-Nitrides created by ion sputtering

Silicon carbo-nitride films with Boron were deposited onto Silicon, glass and SS304 Stainless Steel substrates using the ion beam assisted deposition (IBAD) method. The coating composition, rate of ion-assistance and substrate temperature were varied. Films were examined by X-Ray Diffraction, Scanning Electron microscopy, Energy Dispersive X-Ray analysis, Cathodoluminescence, Atomic Force Micro...